To our customers,
Old Company Name in Catalogs and Other Documents
On April 1 st , 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1 st , 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
相关PDF资料
NP80N055MHE-S18-AY MOSFET N-CH 55V 80A TO-220
NP80N055MLE-S18-AY MOSFET N-CH 55V 80A TO-220
NP82N03PUG-E1-AZ MOSFET N-CH 30V 82A TO-263
NP82N04MDG-S18-AY MOSFET N-CH TO-220
NP82N04MUG-S18-AY MOSFET N-CH TO-220
NP82N04NLG-S18-AY MOSFET N-CH 40V 82A TO-262
NP82N04PDG-E1-AY MOSFET N-CH 40V 82A TO-263
NP82N04PUG-E1-AZ MOSFET N-CH 40V 82A TO-263
相关代理商/技术参数
NP80N055MHE 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N055MHE-AY 制造商:Renesas Electronics Corporation 功能描述:
NP80N055MHE-S18-AY 功能描述:MOSFET N-CH 55V 80A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP80N055MLE 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP80N055MLE-S18-AY 功能描述:MOSFET N-CH 55V 80A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP80N055NDG 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP80N055NDG-S18-AY 功能描述:MOSFET N-CH 55V 80A TO-262 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP80N055NHE 制造商:Renesas Electronics Corporation 功能描述: